منابع مشابه
Radiation-enhanced self- and boron diffusion in germanium
We report experiments on proton radiation-enhanced selfand boron (B) diffusion in germanium (Ge) for temperatures between 515 ◦C and 720 ◦C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction and the interstitialcy and dissociative diffusion mechanisms. The numerical simulations ascertain con...
متن کاملManganese diffusion in monocrystalline germanium
Manganese diffusion in monocrystalline germanium A. Portavoce,a,b,⇑ O. Abbes, Y. Rudzevich, L. Chow, V. Le Thanh and C. Girardeaux CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme case 142, 13397 Marseille, France Aix-Marseille Université, IM2NP, Faculté des Sciences de Saint-Jérôme case 142, 13397 Marseille, France CNRS, CINAM, Campus de Luminy Case 913, 13288 Marseille, France Department of ...
متن کاملPhosphorus Activation and Diffusion in Germanium
Declaration This thesis is a presentation of my original research work. Wherever contributions of others are involved, every effort is made to indicate this clearly, with due reference to the literature, and acknowledgement of collaborative research and discussions.Abstract Currently, the International Technology Roadmap for Semiconductors (ITRS) is targeting the 22nm technology node in accorda...
متن کاملGermanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation
A study is made of germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors made by germanium implantation. Implanted Ge is found to diffuse from the single-crystal silicon substrate into deposited polysilicon emitter layers during rapid thermal anneal at 1045 °C. Measurements of germanium diffusivity in polycrystalline silicon are reported at temperatures between ...
متن کاملIntrinsic and extrinsic diffusion of indium in germanium
Diffusion experiments with indium In in germanium Ge were performed in the temperature range between 550 and 900 °C. Intrinsic and extrinsic doping levels were achieved by utilizing various implantation doses. Indium concentration profiles were recorded by means of secondary ion mass spectrometry and spreading resistance profiling. The observed concentration independent diffusion profiles are a...
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ژورنال
عنوان ژورنال: Physical Review
سال: 1954
ISSN: 0031-899X
DOI: 10.1103/physrev.93.892